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dc.contributor.authorChoudhary, N-
dc.contributor.authorGoel, D K-
dc.contributor.authorKumar, A-
dc.date.accessioned2010-06-01T05:55:16Z-
dc.date.available2010-06-01T05:55:16Z-
dc.date.issued2004-02-
dc.identifier.issn0975-1017 (Online); 0971-4588 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/9263-
dc.description55-58en_US
dc.description.abstractFrequency and temperature dependence of dielectric constant (') and dielectric loss ('') are studied in glassy Se90GexIn10-x, where x = 0, 2, 4, 6, 8 and 10, in the frequency range 1-10 kHz and in the temperature range 293-400 K. The experimental results indicate that no dielectric dispersion exist in glassy Se90Ge10 alloy (x = 10). However, when In concentration increases (x = 8, 6, 4, 2 and 0), dielectric dispersion starts in the above frequency and temperature range. The values of ' and '' at a particular temperature and frequency increase with the increase in In concentration. An analysis of the observed dielectric loss shows that the Guintini's theory of dielectric dispersion based on two electron hopping over a potential barrier is applicable in the present case.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJEMS Vol.11(1) [February 2004]en_US
dc.titleDielectric relaxation in glassy Se90GexIn10-xen_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.11(1) [February 2004]

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