Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/8860| Title: | Analytical model for high temperature performance of non-self aligned SiC MESFET |
| Authors: | Aggarwal, Sandeep Kr Gupta, Ritesh Haldar, Subhasis Gupta, Mridula Gupta, R S |
| Keywords: | SiC-MESFET;Buried P-layer;Self-backgating effect;Parasitic resistances |
| Issue Date: | Sep-2005 |
| Publisher: | CSIR |
| IPC Code: | H01L29/768 |
| Abstract: | An analytical model to evaluate the performance of a non-self-aligned SiC MESFET at elevated temperatures is developed. The formulation, devoid of complex mathematics takes into account all the major effects such as effective mobility, gate-bias dependent parasitic resistances and self-back gating effect. The model evaluates Ids~Vds characteristics, transconductance, channel conductance, intrinsic device capacitances and their dependence on temperature has also been discussed. |
| Page(s): | 697-704 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.43(09) [September 2005] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 43(9) 697-704.pdf | 388.15 kB | Adobe PDF | View/Open |
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.