Silica-on-silicon based 1<img src='/image/spc_char/cross.gif' border=0>N optical splitter: Design, fabrication and characterization

Abstract

The present paper deals with the design, fabrication technology and performance of silica-on-silicon based 1<img src='/image/spc_char/cross.gif' border=0>4 and 1<img src='/image/spc_char/cross.gif' border=0>8 optical power splitter. The basic waveguide structure with S-bends and Y-junctions have been used for the splitter design using BPM software. The optimized process parameters related to choice of metal masking layer, chemistry used for deep dry etching of core layer, dependence of etch process parameters on anisotropy and sidewall smoothness, dicing and fibre alignment are presented. An indigenously built ECR/RIE system especially for deep dry etching of silica layer is also described. The results on splitting insertion loss and uniformity maximum across the channel measured on 1<img src='/image/spc_char/cross.gif' border=0>4 and 1<img src='/image/spc_char/cross.gif' border=0>8 splitters are presented.