Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/8260
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dc.contributor.authorGhosh, S-
dc.contributor.authorThakur, Preeti-
dc.date.accessioned2010-04-22T04:43:32Z-
dc.date.available2010-04-22T04:43:32Z-
dc.date.issued2006-02-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/8260-
dc.description188-191en_US
dc.description.abstractThe implanted ions in a group-IV semiconductor agglomerate to form nano-clusters (NCs) and some of them acquire negative charge which change the balance between electron-hole densities in an otherwise compensated semiconductor. An analytical study has been made on wave spectrum of electro-kinetic (EK) waves propagating through such medium. Using multi-fluid analysis and Maxwell’s equations, a linear dispersion relation for the EK wave in such medium has been derived. This dispersion relation is used to study slow electro-kinetic wave phenomena and resultant instabilities numerically. The drift velocities of electrons and holes are found to be responsible for converting two aperiodic modes into periodic ones. They are also found helpful in reducing the absorption of all the four possible EK modes. It is found that choosing the proper values of applied electric field and wave number one may optimize the amplification coefficients of propagating modes.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.relation.ispartofseriesB82Ben_US
dc.sourceIJPAP Vol.44(02) [February 2006]en_US
dc.subjectElectrostatic wavesen_US
dc.subjectElectrostatic oscillationsen_US
dc.subjectPlasma effectsen_US
dc.subjectDopingen_US
dc.subjectIon-implantationen_US
dc.subjectColloids (NCs)en_US
dc.titleElectro-kinetic wave spectrum in group-IV semiconductors: Effect of streaming carriersen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.44(02) [February 2006]

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