Effect of Gamma Rays Exposure on Cu-Se Heterojunction Nanowires

Abstract

Metal-semiconductor hetero-junction nanowires are a new class of material created by combining metallic and semiconducting materials. These materials exhibit unique features that could not be seen in the separate components at the nanoscale. With the development of technology, nanowire-based semiconducting elements play a significant part in the generation of new devices that are currently expanding quickly. Pre and post gamma exposed Cu-Se heterojunctioned nanowires were characterised to recognize the impact of gamma exposure. I-V measurements of heterojunction nanowires reveal an increase in current with the gamma dose. XRD of Cu-Se nanowires before and after irradiation showed no change in peak positions, but there were a variation in grain size and the texture coefficient. UV-Vis spectroscopy demonstrates that the optical band gap decreases with dose rate.¹