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dc.contributor.authorSharma, R P-
dc.contributor.authorPatil, S V-
dc.contributor.authorBhavsar, S V-
dc.contributor.authorPatil, A R-
dc.contributor.authorDori, L-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.description.abstractThe Cd1-xMn xSe thin films were grown from elemental selenium, sodium sulphite, cadmium chloride and MnCl2, onto glass substrates by a solution growth technique. As-deposited films were annealed at 600 K. The optical absorption of annealed Cd1-xMn xSe thin films with different values or composition parameter x was then studied in the energy range from 1.10 to 4.0 eV. The Cd0.5Mn0.5Se film showed allowed direct optical band gap with a room temperature gap or 1.58 ± 0.01 eV. Another direct transition observed in these films with x = 0.2, 0.3, 0.7 and 0.9 is ascribed to an optical transition from the crystal field spilt, valence band to the conduction band minimum. A third direct allowed transition from the spin-orbit valence band to the Conduction band is also observed in x = 0.2, 0.3, 0.7 and 0.9 films.en_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.37(12) [December 1999]en_US
dc.titleCompositional effect on optical characteristic of solution grown Cd1-xMnxSe thin films en_US
Appears in Collections:IJPAP Vol.37(12) [December 1999]

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