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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sharma, R P | - |
| dc.contributor.author | Patil, S V | - |
| dc.contributor.author | Bhavsar, S V | - |
| dc.contributor.author | Patil, A R | - |
| dc.contributor.author | Dori, L | - |
| dc.date.accessioned | 2014-02-28T05:16:30Z | - |
| dc.date.available | 2014-02-28T05:16:30Z | - |
| dc.date.issued | 1999-12 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/27233 | - |
| dc.description | 876-880 | en_US |
| dc.description.abstract | The Cd1-xMn xSe thin films were grown from elemental selenium, sodium sulphite, cadmium chloride and MnCl2, onto glass substrates by a solution growth technique. As-deposited films were annealed at 600 K. The optical absorption of annealed Cd1-xMn xSe thin films with different values or composition parameter x was then studied in the energy range from 1.10 to 4.0 eV. The Cd0.5Mn0.5Se film showed allowed direct optical band gap with a room temperature gap or 1.58 ± 0.01 eV. Another direct transition observed in these films with x = 0.2, 0.3, 0.7 and 0.9 is ascribed to an optical transition from the crystal field spilt, valence band to the conduction band minimum. A third direct allowed transition from the spin-orbit valence band to the Conduction band is also observed in x = 0.2, 0.3, 0.7 and 0.9 films. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJPAP Vol.37(12) [December 1999] | en_US |
| dc.title | Compositional effect on optical characteristic of solution grown Cd1-xMnxSe thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.37(12) [December 1999] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 37(12) 876-880.pdf | 731.73 kB | Adobe PDF | View/Open |
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