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http://nopr.niscpr.res.in/handle/123456789/26168| Title: | Analytical two-dimensional model for pulsed doped InP-based lattice-matched HEMTs for high frequency applications |
| Authors: | Gupta, Ritesh Gupta, Mridula Gupta, R S |
| Issue Date: | May-2002 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | An analytical two-dimensional model for pulsed doped HEMT is developed for InAlAs/ InGaAs heterostructure using Greens function. Non- linear variation of sheet carrier density with quasi-Fermi energy is used to formulate the characteristics. The exact variation of sheet carrier density with gate voltage and the extension of gate boundaries with the variation of gate-to-drain and gate-to-source voltages are included in the analysis and the electric field profile has also been extensively studied considering the short channel effects. Results so obtained are in close proximity with published data. |
| Page(s): | 342-349 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.40(05) [May 2002] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 40(5) 342-349.pdf | 1.32 MB | Adobe PDF | View/Open |
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