Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/25186| Title: | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET |
| Authors: | Kumar, Anil Kalra, Ekta Bose, Srikanta Singh, Adarsh Bindra, Simrata Haldar, Subhasis Gupta, R S |
| Issue Date: | Nov-2001 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An express ion for channel length modulation factor is also developed and the substrate current is calculated. |
| Page(s): | 731-737 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.39(11) [November 2001] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 39(11) 731-737.pdf | 1.07 MB | Adobe PDF | View/Open |
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