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http://nopr.niscpr.res.in/handle/123456789/25131| Title: | Dependence of electrical conductivity on selenium and sulphur doping in a-Si:H |
| Authors: | Sharma, S K Baveja, J Mehra, R M |
| Keywords: | Electrical conductivity;Selenium;Silicon-sulphur alloys |
| Issue Date: | Jun-2003 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Se- and S-doped a-Si:H films were prepared by the decomposition of H2Se and H2S with SiH4 gas mixtures by plasma enhanced chemical vapour deposition (PECYD) in a ratio of H2Se/SiH4=1.0×10-4 to 1.0×10-1 and H2S/SiH4=6.81×10-7 to 1.0×10-4.The dielectric constant of Se- and S-doped a-Si:H films vary with doping concentration and can be tailored by changing the gas ratio. The de dark and photoconductivity showed a maximum at H2Se/SiH4 = 10-3 and a-Si, S:H at H2S/SiH4 = 1.0×10-4 and the activation energy is lower at these doping levels. The room temperature dark and photoconductivity in Se and S-doped a-S:H films have been found to increase as the gas ratios increase for H2Se/SiH4= 10-3 and H2S/SiH4=10-4 , after this range in Se-doped, the dark and photoconductivity decrease to the alloy range. |
| Page(s): | 491-494 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.41(06) [June 2003] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 41(6) 491-494.pdf | 816.09 kB | Adobe PDF | View/Open |
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