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http://nopr.niscpr.res.in/handle/123456789/25055| Title: | Modeling, characterization and optimization of tri-step doped InAIAs/InGaAs heterostructure, InP based HEMT for microwave frequency applications |
| Authors: | Gupta, Ritesh Gupta, Mridula Gupta, R S |
| Issue Date: | Mar-2003 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A new analytical model for tri-step doped InAIAs/InGaAs heterostructure InP based HEMT has been proposed in this paper. Maximum sheet carrier density has been formulated considering the limitation arising from the doping- thickness product. A comparison is made between conventional pulsed doped structure and equivalent tri -step doped structures to validate the model. The conventional pulsed doped device is also optimized for higher sheet carrier concentration/effective parallel conduction voltage/transconductance/cut-off frequency by varying the Schottky layer thickness for identical carriers using equivalent tri-step eloped structure. |
| Page(s): | 223-231 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.41(03) [March 2003] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 41(3) 223-231.pdf | 1.6 MB | Adobe PDF | View/Open |
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