Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9963
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dc.contributor.authorSharma, M K-
dc.contributor.authorJoshi, D P-
dc.date.accessioned2010-07-16T07:05:10Z-
dc.date.available2010-07-16T07:05:10Z-
dc.date.issued2010-08-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/9963-
dc.description575-580en_US
dc.description.abstractA new relation for the effective diffusion length of minority carriers has been presented and the performance of polycrystalline GaAs solar cells has been studied theoretically. It has been found that in the very small grain size range, the diffusion length of minority carriers in these devices is controlled not only by the grain boundary (GB) recombination processes but also by the GB recombination processes in the junction space charge region. In the very small grain size range, the efficiency of these solar cells has been found to be very sensitive to the grain size as compared to that observed for PX-Si solar cells. A good agreement has been found between the theoretical predictions and the available experimental data.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJPAP Vol.48(08) [August 2010]en_US
dc.subjectPhotovoltaic propertiesen_US
dc.subjectGaAs solar cellsen_US
dc.subjectPX-GaAs filmsen_US
dc.titleEffect of grain boundaries on photovoltaic properties of PX-GaAs filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.48(08) [August 2010]

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