Please use this identifier to cite or link to this item:
Title: Effect of grain boundaries on photovoltaic properties of PX-GaAs films
Authors: Sharma, M K
Joshi, D P
Keywords: Photovoltaic properties
GaAs solar cells
PX-GaAs films
Issue Date: Aug-2010
Publisher: CSIR
Abstract: A new relation for the effective diffusion length of minority carriers has been presented and the performance of polycrystalline GaAs solar cells has been studied theoretically. It has been found that in the very small grain size range, the diffusion length of minority carriers in these devices is controlled not only by the grain boundary (GB) recombination processes but also by the GB recombination processes in the junction space charge region. In the very small grain size range, the efficiency of these solar cells has been found to be very sensitive to the grain size as compared to that observed for PX-Si solar cells. A good agreement has been found between the theoretical predictions and the available experimental data.
Description: 575-580
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.48(08) [August 2010]

Files in This Item:
File Description SizeFormat 
IJPAP 48(8) 575-580.pdf166.92 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.