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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.48 [2010] >
IJPAP Vol.48(08) [August 2010] >
| Title: | Effect of grain boundaries on photovoltaic properties of PX-GaAs films |
| Authors: | Sharma, M K
Joshi, D P |
| Keywords: | Photovoltaic properties
GaAs solar cells
PX-GaAs films |
| Issue Date: | Aug-2010 |
| Publisher: | CSIR |
| Abstract: | A new relation for
the effective diffusion length of minority carriers has been presented and the
performance of polycrystalline GaAs solar cells has been studied theoretically.
It has been found that in the very small grain size range, the diffusion length
of minority carriers in these devices is controlled not only by the grain
boundary (GB) recombination processes but also by the GB recombination processes
in the junction space charge region. In the very small grain size range, the
efficiency of these solar cells has been found to be very sensitive to the
grain size as compared to that observed for
PX-Si solar cells. A good agreement has been found between the theoretical
predictions and the available experimental data. |
| Page(s): | 575-580 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.48(08) [August 2010]
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