Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9654
Title: Study of copper-silicon junctions fabricated by selective electroless deposition
Authors: Dhingra, Sunil
Arora, Sanjiv
George, P J
Keywords: Copper-silicon junctions
Electroless deposition
Metal semiconductor
Issue Date: Dec-2004
Publisher: CSIR
Series/Report no.: H01L
Abstract: The metal semiconductor contacts have been fabricated by electroless deposition of copper on chemically cleaned p-type silicon and their characteristics studied. A continuous thin film of good quality and adhesion is formed. The values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts. The barrier heights measured from I-V and C-V characteristics are also found to be comparable.
Description: 916-920
URI: http://hdl.handle.net/123456789/9654
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(12) [December 2004]

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