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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.42 [2004] >
IJPAP Vol.42(12) [December 2004] >
| Title: | Theoretical study of the effect of applied stress on the binding energy of a donor impurity in GaAs quantum well dot within an infinite potential barrier |
| Authors: | Oyoko, H Odhiambo
Duque, C A
Montenegro, N Porras |
| Keywords: | Binding energy
Donor impurity
GaAs quantum well dot
Infinite potential barrier |
| Issue Date: | Dec-2004 |
| Publisher: | CSIR |
| IPC Code: | G01L |
| Abstract: | A theoretical study
has been carried out on the effect of applied stress on the binding energy of a
shallow monovalent donor impurity in a GaAs quantum well dot (QWD) of square
cross-section. In our calculations, a variational technique [Csavinzky &
Oyoko, Phys Rev B, 43 (1991) 9262.]
within the effective mass approximation has been used. In our model the donor
impurity is confined to the QWD by an infinite barrier potential unlike in a
previous study [Oyoko et al. J Appl Phys, 90 (2001) 819.] where the
barrier potential was finite. The donor impurity was located at various
positions along the axis (Z-direction) of the QWD. The stress was applied along
the same axis. The results show that for constant QWD dimensions Lx,
Ly and Lz, for various donor positions, the binding
energy increases with the applied stress as the donor position varies from
on-edge to on-center locations. The binding energy is also found to increase as
the QWD length decreases in both cases of on-edge and on-center donor locations
for constant Lx and Ly as well as for decreasing QWD
size. In all the cases considered, the binding energy is much larger for the
on-center than for the on-edge positions for the same QWD dimensions and the
same applied axial stress. The results obtained show that in experimental study
of optical and electronic properties of such nanostructures as QWDs, the effect
of stress on donor impurity binding energies should be taken into
consideration. |
| Page(s): | 908-911 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.42(12) [December 2004]
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