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IJPAP Vol.42(12) [December 2004] >


Title: Theoretical study of the effect of applied stress on the binding energy of a donor impurity in GaAs quantum well dot within an infinite potential barrier
Authors: Oyoko, H Odhiambo
Duque, C A
Montenegro, N Porras
Keywords: Binding energy
Donor impurity
GaAs quantum well dot
Infinite potential barrier
Issue Date: Dec-2004
Publisher: CSIR
IPC CodeG01L
Abstract: A theoretical study has been carried out on the effect of applied stress on the binding energy of a shallow monovalent donor impurity in a GaAs quantum well dot (QWD) of square cross-section. In our calculations, a variational technique [Csavinzky & Oyoko, Phys Rev B, 43 (1991) 9262.] within the effective mass approximation has been used. In our model the donor impurity is confined to the QWD by an infinite barrier potential unlike in a previous study [Oyoko et al. J Appl Phys, 90 (2001) 819.] where the barrier potential was finite. The donor impurity was located at various positions along the axis (Z-direction) of the QWD. The stress was applied along the same axis. The results show that for constant QWD dimensions Lx, Ly and Lz, for various donor positions, the binding energy increases with the applied stress as the donor position varies from on-edge to on-center locations. The binding energy is also found to increase as the QWD length decreases in both cases of on-edge and on-center donor locations for constant Lx and Ly as well as for decreasing QWD size. In all the cases considered, the binding energy is much larger for the on-center than for the on-edge positions for the same QWD dimensions and the same applied axial stress. The results obtained show that in experimental study of optical and electronic properties of such nanostructures as QWDs, the effect of stress on donor impurity binding energies should be taken into consideration.
Page(s): 908-911
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Source:IJPAP Vol.42(12) [December 2004]

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