Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9646
Title: Application of pseudopotential to III-V semiconductor compounds
Authors: Jivani, A R
Gajjar, P N
Jani, A R
Keywords: Pseudopotential
Perturbation theory
Semiconductor
Energy band gap
Issue Date: Nov-2004
Publisher: CSIR
Series/Report no.: B 28 D 5/00
Abstract: The recently proposed model potential which includes covalent correction terms, is employed to calculate total energy, energy band gap at Jones-zone face and bulk modulus of GaP, GaAs, GaSb, InP, InAs and InSb. The ratio of the covalent bonding term Ecov to the second order term E2 confirms the essentiality of higher order correction for zinc blende-type crystals. The calculated numerical results for the total energy, energy band gap at Jones-zone face and bulk modulus of these compounds are in good agreement with the experimental data than other such theoretical findings.
Description: 833-836
URI: http://hdl.handle.net/123456789/9646
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(11) [November 2004]

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