Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9646
Title: Application of pseudopotential to III-V semiconductor compounds
Authors: Jivani, A R
Gajjar, P N
Jani, A R
Keywords: Pseudopotential
Perturbation theory
Semiconductor
Energy band gap
Issue Date: Nov-2004
Publisher: CSIR
Series/Report no.: B 28 D 5/00
Abstract: The recently proposed model potential which includes covalent correction terms, is employed to calculate total energy, energy band gap at Jones-zone face and bulk modulus of GaP, GaAs, GaSb, InP, InAs and InSb. The ratio of the covalent bonding term <i style="">E</i><sub>cov</sub> to the second order term <i style="">E</i><sub>2</sub> confirms the essentiality of higher order correction for zinc blende-type crystals. The calculated numerical results for the total energy, energy band gap at Jones-zone face and bulk modulus of these compounds are in good agreement with the experimental data than other such theoretical findings.
Description: 833-836
URI: http://hdl.handle.net/123456789/9646
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(11) [November 2004]

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