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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.42 [2004] >
IJPAP Vol.42(11) [November 2004] >
| Title: | Application of pseudopotential to III-V semiconductor compounds |
| Authors: | Jivani, A R
Gajjar, P N
Jani, A R |
| Keywords: | Pseudopotential
Perturbation theory
Semiconductor
Energy band gap |
| Issue Date: | Nov-2004 |
| Publisher: | CSIR |
| IPC Code: | B 28 D 5/00 |
| Abstract: | The recently
proposed model potential which includes covalent correction terms, is employed
to calculate total energy, energy band gap at Jones-zone face and bulk modulus
of GaP, GaAs, GaSb, InP, InAs and InSb. The ratio of the covalent bonding term Ecov to the second order term
E2 confirms the
essentiality of higher order correction for zinc blende-type crystals. The
calculated numerical results for the total energy, energy band gap at
Jones-zone face and bulk modulus of these compounds are in good agreement with
the experimental data than other such theoretical findings. |
| Page(s): | 833-836 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.42(11) [November 2004]
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