Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9639
Title: Short circuit current variation of CIGS solar cells with grain boundaries recombination velocity
Authors: Singh, Lakshman
Saxena, Manish
Bhatnagar, P K
Keywords: Grain boundaries
Recombination velocity
Grain size
Short circuit current density
CIGS solar cells
Issue Date: Nov-2004
Publisher: CSIR
Series/Report no.: H 01 L 31/0272
Abstract: The material CuIn<sub>x</sub>Ga<sub>1</sub><sub>-x</sub>Se<sub>2</sub> (CIGS with 0<<i style="">x</i><0.3) has attracted much attention, recently, all over the world as a prospective material for photovoltaic application. The addition of gallium in CIS (CuInSe<sub>2</sub>) considerably improves not only the performance but the stability and efficiency of the device also. A theoretical analysis of variation of short circuit current density (<i style="">J</i><sub>SC</sub>) of polycrystalline solar cell has been reported. As the grain size (<i style="">d</i><sub>G</sub>) and grain boundary recombination velocity (<i style="">S</i><sub>GB</sub>) play an important role in deciding device characteristics, the calculations of the dependence of short-circuits photocurrent density (<i style="">J</i><sub>SC</sub>) have been done on these parameters. The results show a good agreement with the experimental results. A small discrepancy may be attributed to the fact that the typical shape of the grains was assumed to be square-face columnar shaped.
Description: 841-844
URI: http://hdl.handle.net/123456789/9639
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(11) [November 2004]

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