Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9639
Title: Short circuit current variation of CIGS solar cells with grain boundaries recombination velocity
Authors: Singh, Lakshman
Saxena, Manish
Bhatnagar, P K
Keywords: Grain boundaries
Recombination velocity
Grain size
Short circuit current density
CIGS solar cells
Issue Date: Nov-2004
Publisher: CSIR
Series/Report no.: H 01 L 31/0272
Abstract: The material CuInxGa1-xSe2 (CIGS with 0<x<0.3) has attracted much attention, recently, all over the world as a prospective material for photovoltaic application. The addition of gallium in CIS (CuInSe2) considerably improves not only the performance but the stability and efficiency of the device also. A theoretical analysis of variation of short circuit current density (JSC) of polycrystalline solar cell has been reported. As the grain size (dG) and grain boundary recombination velocity (SGB) play an important role in deciding device characteristics, the calculations of the dependence of short-circuits photocurrent density (JSC) have been done on these parameters. The results show a good agreement with the experimental results. A small discrepancy may be attributed to the fact that the typical shape of the grains was assumed to be square-face columnar shaped.
Description: 841-844
URI: http://hdl.handle.net/123456789/9639
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(11) [November 2004]

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