Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9632
Title:  Steady state photoconductivity in a-Se80-xTe20Gex thin films
Authors: Kumar, D
Kumar, S
Keywords:  Amorphous Se80-xTe20Gex
Dark conductivity
Photoconductivity
Thin films
Issue Date: Oct-2004
Publisher: CSIR
Series/Report no.: G03G 5/04
Abstract:  The steady state photoconductivity of vacuum evaporated thin films of amorphous Se80-xTe20Gex (x = 5, 10, 15 and 20) has been investigated. The measurements of temperature dependence of dark conductivity (σd) and photoconductivity (σph) show that the conduction is through a thermally activated process in both the cases. The activation energy decreases with the increase in light intensity. This indicates the shift of Fermi level with intensity. The measurements of intensity dependence of photoconductivity show that the photoconductivity increases with intensity as a power law where the power is found to be between 0.5 and 1.0. The photosensitivity (σphd) increases with the increase of Ge concentration which indicates that the density of defect states decreases with the increase of Ge in a-Se80-xTe20Gex. This is consistent with the conclusions reported in the literature by dielectric loss measurements.
Description: 771-774
URI: http://hdl.handle.net/123456789/9632
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(10) [October 2004]

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