A power VDMOSFET has been simulated using PISCES-II, a 2-D
numerical device simulator. The doping densities and device dimensions are
chosen so as to simulate a typical device structure with one micron channel
length. These simulations are aimed at understanding the device physics through
various internal electrical quantities like potential distribution, electric
field distribution, and electron concentrations etc. in different regions of
the device both in on/off states. Simulated results have been used to extract
circuit model parameters like VT, KP and λ
etc. for a VDMOSFET equivalent circuit model comprising of a lateral MOSFET in
series with a JFET. It advances the
earlier models in terms of number of parameters extracted for its SPICE implementation.
The characteristics obtained from the dc circuit model show good agreement with
the simulated data, thus validating the device operation, the circuit model and
its parameter extraction procedures.
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