Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9630
Title: Modeling power VDMOSFET transistors: Device physics and equivalent circuit model with parameter extraction
Authors: Vaid, Rakesh
Padha, Naresh
Kumar, Anil
Gupta, R S
Parikh, Chetan D
Keywords: Power MOSFET
VDMOSFET
Device simulation
Parameter extraction
Issue Date: Oct-2004
Publisher: CSIR
Series/Report no.: H01L 21/00
Abstract: <link rel="File-List" href="file:///C:%5CDOCUME%7E1%5Ccharu%5CLOCALS%7E1%5CTemp%5Cmsohtml1%5C01%5Cclip_filelist.xml"> A power VDMOSFET has been simulated using PISCES-II, a 2-D numerical device simulator. The doping densities and device dimensions are chosen so as to simulate a typical device structure with one micron channel length. These simulations are aimed at understanding the device physics through various internal electrical quantities like potential distribution, electric field distribution, and electron concentrations etc. in different regions of the device both in on/off states. Simulated results have been used to extract circuit model parameters like <i>V<sub>T</sub></i>, <i>K<sub>P</sub></i> and <i>λ</i> etc. for a VDMOSFET equivalent circuit model comprising of a lateral MOSFET in series with a JFET. It advances the earlier models in terms of number of parameters extracted for its SPICE implementation. The characteristics obtained from the dc circuit model show good agreement with the simulated data, thus validating the device operation, the circuit model and its parameter extraction procedures.
Description: 775-782
URI: http://hdl.handle.net/123456789/9630
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(10) [October 2004]

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