Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9627
Title: <link rel="File-List" href="file:///C:%5CDOCUME%7E1%5Ccharu%5CLOCALS%7E1%5CTemp%5Cmsohtml1%5C01%5Cclip_filelist.xml"> Characterization of Ni-doped SrTiO<sub>3</sub> ceramics using impedance spectroscopy
Authors: Rout, S K
Panigrahi, S
Bera, J
Keywords: Acceptor
Dielectric properties
Grain
Grain boundary
Impedance spectroscopy
<link rel="File-List" href="file:///C:%5CDOCUME%7E1%5Ccharu%5CLOCALS%7E1%5CTemp%5Cmsohtml1%5C01%5Cclip_filelist.xml"> Ni-doped SrTiO<sub>3</sub>
Issue Date: Oct-2004
Publisher: CSIR
Series/Report no.: G01R 27/26; G01N 33/38
Abstract: <link rel="File-List" href="file:///C:%5CDOCUME%7E1%5Ccharu%5CLOCALS%7E1%5CTemp%5Cmsohtml1%5C01%5Cclip_filelist.xml"> The ceramic SrTiO<sub>3</sub><sup> </sup>(ST) with 0.2 atom % Ni doped was prepared by solid state reaction route. Average grain size of doped samples was measured and found to be 2.8 micron. The relative permittivity and dielectric loss of ST ceramics were found to increase with Ni-doping. The capacitance was measured at temperatures ranging from 400° to 700°C in the frequency range 10 Hz-13MHz. The grain and grain boundaries relaxation frequencies were shifted to higher frequency with temperature. The impedance measurements were conducted at 500°C to separate grain and grain boundary contributions. The bulk and grain boundary resistance was evaluated from impedance complex plain plot and equivalent Resistance-Capacitance (RC) circuit is proposed to model the experimental data.
Description: 741-744
URI: http://hdl.handle.net/123456789/9627
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(10) [October 2004]

Files in This Item:
File Description SizeFormat 
IJPAP 42(10) 741-744.pdf330.11 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.