The ceramic SrTiO3(ST) with 0.2 atom % Ni doped was prepared by solid state reaction route.
Average grain size of doped samples was measured and found to be 2.8 micron.
The relative permittivity and dielectric loss of ST ceramics were found to increase
with Ni-doping. The capacitance was measured at temperatures ranging from 400° to 700°C in the frequency range 10 Hz-13MHz.
The grain and grain boundaries relaxation frequencies were shifted to higher
frequency with temperature. The impedance measurements were conducted at 500°C to separate grain and grain boundary contributions. The bulk and
grain boundary resistance was evaluated from impedance complex plain plot and
equivalent Resistance-Capacitance (RC) circuit is proposed to model the
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