Electrical, optical and structural properties of indium-antimonide (In-Sb) bilayer film structure

Abstract

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The indium-antimonide having small band gap is an important material for IR detectors and sources. The In-Sb thin film was deposited on glass substrate in the high vacuum chamber at pressure 10^-5 torr. The samples were annealed for three hours on two different temperatures. The electrical resistivity decreases with increasing temperature, shows the semiconducting behaviour. The optical band gap varies from 0.22 to 0.23 eV with annealing temperature. The observed positive thermoelectric power indicates that In-Sb thin films were <i>p</i>-type in nature. The Rutherford back scattering analysis shows that the inter-diffusion concentration varies with temperature and X-ray diffraction pattern shows the improvement of crystallinity with annealing temperature.

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