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|Title: ||Electrical, optical and structural properties of indium-antimonide (In-Sb) bilayer film structure|
|Authors: ||Singh, M|
Vijay, Y K
|Keywords: ||In-Sb;Band gap;electrical resistivity;optical band gap|
|Issue Date: ||Aug-2004|
|IPC Code: ||C 03 B 25/00|
The indium-antimonide having small band gap is an important
material for IR detectors and sources. The In-Sb thin film was deposited on
glass substrate in the high vacuum chamber at pressure 10-5 torr.
The samples were annealed for three hours on two different temperatures. The
electrical resistivity decreases with increasing temperature, shows the
semiconducting behaviour. The optical band gap varies from 0.22 to 0.23 eV with
annealing temperature. The observed positive thermoelectric power indicates that
In-Sb thin films were p-type in nature. The Rutherford
back scattering analysis shows that the inter-diffusion concentration varies
with temperature and X-ray diffraction pattern shows the improvement of
crystallinity with annealing temperature.
|ISSN: ||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.42(08) [August 2004]|
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