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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.42 [2004] >
IJPAP Vol.42(07) [July 2004] >
| Title: | Effect of grain size on the mobility and transfer characteristics of polysilicon thin-film transistors |
| Authors: | Gupta, Navneet
Tyagi, B P |
| Keywords: | Mobility
Polysilicon thin-film transistors
Grain size |
| Issue Date: | Jul-2004 |
| Publisher: | CSIR |
| IPC Code: | H01L 27/00 |
| Abstract: | The
effect of the grain size on the effective carrier mobility ( eff) and transfer characteristics of a polycrystalline
silicon thin-film transistor (poly-Si TFT) have been theoretically investigated
by developing an analytical model. The dependence of eff is studied as a function of doping concentrations and
gate voltage for different values of grain size. It is observed that at low as
well as at high doping concentrations, the effective carrier mobility (eff) increases with increase in grain size, whereas the
observed dip at the intermediate doping concentration is getting confirmed. The
effect of the grain size on transfer characteristics of poly-Si TFT in its
linear region is also presented. It is found that at low gate voltages, eff and ID increase rapidly with the
increase in VG for all values of grain sizes due to the grain boundary barrier lowering effect. At
high gate voltage the grain boundary barrier lowering effect becomes
insignificant and causes the saturation of eff and ID. The model was found to account correctly for the
experimentally observed mobility variation and yield a reasonably good
agreement. |
| Page(s): | 528-532 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.42(07) [July 2004]
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