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Title: Effective mass calculation for InSe, InSe:Ho0.0025, InSe:Ho0.025, InSe:Ho0.005 and InSe:Ho0.05 samples using the external electric field shifting
Authors: ATEŞ, Aytunç
Keywords: InSe single crystal;absorption;exciton binding energy;Holmium doping
Issue Date: Mar-2004
Publisher: CSIR
IPC Code: H 01L 27/04
Abstract: Undoped InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped with different ratios of  (InSe:Ho0.0025, InSe:Ho0.025, InSe:Ho0.005 and InSe:Ho0.05) had no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10-320 K and the external electric field effect on the absorption measurements was investigated. The absorption edge shifted towards the longer wavelengths under an electric field as  6 kV/cm. Using the electric field shits, effective mass values are calculated for all the samples.
Page(s): 205-210
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(03) [March 2004]

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