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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.42 [2004] >
IJPAP Vol.42(03) [March 2004] >
| Title: | Effective mass calculation for InSe, InSe:Ho0.0025, InSe:Ho0.025, InSe:Ho0.005 and InSe:Ho0.05 samples using the external electric field shifting |
| Authors: | ATEŞ, Aytunç |
| Keywords: | InSe single crystal
absorption
exciton binding energy
Holmium doping |
| Issue Date: | Mar-2004 |
| Publisher: | CSIR |
| IPC Code: | H 01L 27/04 |
| Abstract: | Undoped
InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger
method. The InSe crystals both undoped and doped with different ratios of (InSe:Ho0.0025, InSe:Ho0.025,
InSe:Ho0.005 and InSe:Ho0.05) had no cracks or voids on
the surface. No polishing or cleaning treatments were carried out on the
cleaved faces of these samples because of the natural mirror-like cleavage
faces. The absorption measurements were carried out in the temperature range
10-320 K and the external electric field effect on the absorption measurements
was investigated. The absorption edge shifted towards the longer wavelengths
under an electric field as 6 kV/cm.
Using the electric field shits, effective mass values are calculated for all
the samples. |
| Page(s): | 205-210 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.42(03) [March 2004]
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