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http://nopr.niscair.res.in/handle/123456789/9579| Title: | Effective mass calculation for InSe, InSe:Ho0.0025, InSe:Ho0.025, InSe:Ho0.005 and InSe:Ho0.05 samples using the external electric field shifting |
| Authors: | ATEŞ, Aytunç |
| Keywords: | InSe single crystal;absorption;exciton binding energy;Holmium doping |
| Issue Date: | Mar-2004 |
| Publisher: | CSIR |
| IPC Code: | H 01L 27/04 |
| Abstract: | Undoped InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped with different ratios of (InSe:Ho0.0025, InSe:Ho0.025, InSe:Ho0.005 and InSe:Ho0.05) had no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10-320 K and the external electric field effect on the absorption measurements was investigated. The absorption edge shifted towards the longer wavelengths under an electric field as 6 kV/cm. Using the electric field shits, effective mass values are calculated for all the samples. |
| Page(s): | 205-210 |
| URI: | http://hdl.handle.net/123456789/9579 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.42(03) [March 2004] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 42(3) 205-210.pdf | 167.53 kB | Adobe PDF | View/Open |
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