Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9574
Title: Modelling of threshold voltage adjustment in fully depleted double gate (DG) SOI MOSFETs in volume inversion to quantify requirements of gate materials
Authors: Kranti, Abhinav
Rashmi
Haldar, S
Gupta, R S
Keywords: Double Gate SOI MOSFET
Threshold voltage adjustment
Gate materials
Volume inversion
SOI MOSFET
MOSFET
Issue Date: Mar-2004
Publisher: CSIR
Series/Report no.: G 01R 3/00
Abstract: An analytical model is developed for volume inversion in DG SOI MOSFETs to study the impact of silicon film thickness, work function difference between gate and substrate, and gate voltage on electric potential, electron density and sheet density of mobile charges. The proposed model is extended to predict the threshold voltage of devices with different gate materials and quantifies the gate material requirements of symmetric self-aligned DG MOSFETs. A limiting criterion is developed on doping level and film thickness to ensure the occurrence of volume inversion in fully depleted DG SOI MOSFETs. Close proximity with simulated results confirms the validity of the present model.
Description: 211-220
URI: http://hdl.handle.net/123456789/9574
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.42(03) [March 2004]

Files in This Item:
File Description SizeFormat 
IJPAP 42(3) 211-220.pdf130.78 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.