|
NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR) >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.42 [2004] >
IJPAP Vol.42(03) [March 2004] >
| Title: | Modelling of threshold voltage adjustment in fully depleted double gate (DG) SOI MOSFETs in volume inversion to quantify requirements of gate materials |
| Authors: | Kranti, Abhinav
Rashmi
Haldar, S
Gupta, R S |
| Keywords: | Double Gate SOI MOSFET
Threshold voltage adjustment
Gate materials
Volume inversion
SOI MOSFET
MOSFET |
| Issue Date: | Mar-2004 |
| Publisher: | CSIR |
| IPC Code: | G 01R 3/00 |
| Abstract: | An analytical model is developed for volume inversion in DG
SOI MOSFETs to study the impact of silicon film thickness, work function
difference between gate and substrate, and gate voltage on electric potential,
electron density and sheet density of mobile charges. The proposed model is
extended to predict the threshold voltage of devices with different gate
materials and quantifies the gate material requirements of symmetric
self-aligned DG MOSFETs. A limiting criterion is developed on doping level and
film thickness to ensure the occurrence of volume inversion in fully depleted
DG SOI MOSFETs. Close proximity with simulated results confirms the validity of
the present model. |
| Page(s): | 211-220 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.42(03) [March 2004]
|
|
