Optical and electrical properties of indium-tin oxide films

Abstract

Indium-tin oxide films find several applications because of their excellent properties such as high optical transparency, good electrical conductivity, high infrared reflectance etc. Achieving these properties depend on the choice of the deposition technique and the control of process parameters. It is all the more beneficial if these properties are to be realized at ambient temperature and without post deposition heating. In this investigation, indium-tin oxide films have been deposited by reactive electron beam evaporation of In+Sn alloy both in neutral and ionized oxygen environments. A low energy ion source has been used to ionize oxygen. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550nm). Highly transparent (90%) and low resistivity (5<img src='/image/spc_char/cross.gif' border=0>10^-4ohm cm) films have been deposited on glass in ionized oxygen at ambient substrate temperature. As deposited films on ambient substrate with very low resistivity obtained by evaporation, are very significant