Please use this identifier to cite or link to this item:
http://nopr.niscair.res.in/handle/123456789/9573
Title: | Optical and electrical properties of indium-tin oxide films |
Authors: | Rao, K Narasimha |
Keywords: | Optical properties;Indium tin oxide films;electrical properties |
Issue Date: | Mar-2004 |
Publisher: | CSIR |
IPC Code: | C01G |
Abstract: | Indium-tin
oxide films find several applications because of their excellent properties
such as high optical transparency, good electrical conductivity, high infrared
reflectance etc. Achieving these properties depend on the choice of the
deposition technique and the control of process parameters. It is all the more
beneficial if these properties are to be realized at ambient temperature and
without post deposition heating. In this investigation, indium-tin oxide films
have been deposited by reactive electron beam evaporation of In+Sn alloy both
in neutral and ionized oxygen environments. A low energy ion source has been
used to ionize oxygen. Films deposited with neutral oxygen exhibited very low
optical transmittance (5% at 550nm). Highly transparent (90%) and low
resistivity (5![]() |
Page(s): | 201-204 |
URI: | http://hdl.handle.net/123456789/9573 |
ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
Appears in Collections: | IJPAP Vol.42(03) [March 2004] |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
IJPAP 42(3) 201-204.pdf | 110.93 kB | Adobe PDF | View/Open |
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