Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9318
Title: Effect of facet coatings on laser diode characteristics
Authors: Bhore, P V
Shah, A P
Gokhale, M R
Ghosh, S
Bhattacharya, A
Arora, B M
Issue Date: Oct-2004
Publisher: CSIR
Series/Report no.: Int. Cl.<sup>7</sup> H01S 5/028
Abstract: The cleaved facets of semiconductor diode lasers act like mirror. Mirror coatings are applied to change the reflectivity and passivate the surfaces. Design of antireflection coating is optimized for single layer of Al<sub>2</sub>O<sub>3 </sub>and high reflection coating is optimized for stacks of Al<sub>2</sub>O<sub>3 </sub>and Si Bragg reflector. Electron beam evaporation has been used to deposit uniform Al<sub>2</sub>O<sub>3</sub>/Si film under high vacuum with pressure 10<sup>-6 </sup>mbar and temperature 150-160°C. The optimization of experimental parameters for the dummy GaAs substrate has been discussed. Using these parameters laser facets were coated and changes in the L-I characteristics have been measured and investigated step by step. The output light power versus current characteristics of coated laser diode is compared with that of uncoated one for its characterization under pulsed conditions and have shown that the facet reflectivity has played a major role in determining threshold current density of semiconductor laser.
Description: 438-440
URI: http://hdl.handle.net/123456789/9318
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Appears in Collections:IJEMS Vol.11(5) [October 2004]

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