Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/9263
Title: Dielectric relaxation in glassy Se<sub>90</sub>Ge<sub>x</sub>In<sub>10-x</sub>
Authors: Choudhary, N
Goel, D K
Kumar, A
Issue Date: Feb-2004
Publisher: CSIR
Abstract: Frequency and temperature dependence of dielectric constant (<b style=""><img src='/image/spc_char/italics_e.gif' border=0>'</b>) and dielectric loss (<b style=""><img src='/image/spc_char/italics_e.gif' border=0>''</b>) are studied in glassy Se<sub>90</sub>Ge<sub>x</sub>In<sub>10-x</sub>, where x = 0, 2, 4, 6, 8 and 10, in the frequency range 1-10 kHz and in the temperature range 293-400 K. The experimental results indicate that no dielectric dispersion exist in glassy Se<sub>90</sub>Ge<sub>10</sub> alloy (x = 10). However, when In concentration increases (x = 8, 6, 4, 2 and 0), dielectric dispersion starts in the above frequency and temperature range. The values of <b style=""><img src='/image/spc_char/italics_e.gif' border=0>' </b>and <img src='/image/spc_char/italics_e.gif' border=0>'' at a particular temperature and frequency increase with the increase in In concentration. An analysis of the observed dielectric loss shows that the Guintini's theory of dielectric dispersion based on two electron hopping over a potential barrier is applicable in the present case.
Description: 55-58
URI: http://hdl.handle.net/123456789/9263
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Appears in Collections:IJEMS Vol.11(1) [February 2004]

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