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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.43 [2005] >
IJPAP Vol.43(10) [October 2005] >
| Title: | Effect of charge bump on the series resistance and microwave properties of Si n+np+ IMPATT diode at X-band |
| Authors: | De, P |
| Keywords: | Series Resistance
Low-high-low
SDR
X-band
IMPATT diode |
| Issue Date: | Oct-2005 |
| Publisher: | CSIR |
| IPC Code: | H01L29/861 |
| Abstract: | The value of series
resistance (Rs) of Si n+np+ IMPATT diode has been studied through computer
simulation considering experimental bias current and frequency in the X-band,
and the results fit well with the device data (1.6 Ω at 10 GHz) for the flat doping profile. It is further observed that
the value of Rs decreases
from 1.76 to 0.1128 Ω at 10.7
GHz under experimental current density (3.45 106 A.m-2) and temperature (373K), as the doping profile changes from flat to
low-high-low(lhl) type with the incorporation of charge bump. The electric
field and the negative resistivity profiles in the depletion layer clearly
indicate the advantage of lhl doping profile on the series resistance as well
as on its microwave properties. The analysis also gives an idea on the unison
of load conductance of the waveguide and negative conductance of the diode at
resonance. |
| Page(s): | 794-798 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.43(10) [October 2005]
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