Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/8860
Title: Analytical model for high temperature performance of non-self aligned SiC MESFET
Authors: Aggarwal, Sandeep Kr
Gupta, Ritesh
Haldar, Subhasis
Gupta, Mridula
Gupta, R S
Keywords: SiC-MESFET
Buried P-layer
Self-backgating effect
Parasitic resistances
Issue Date: Sep-2005
Publisher: CSIR
Series/Report no.: H01L29/768
Abstract: An analytical model to evaluate the performance of a non-self-aligned SiC MESFET at elevated temperatures is developed. The formulation, devoid of complex mathematics takes into account all the major effects such as effective mobility, gate-bias dependent parasitic resistances and self-back gating effect. The model evaluates <i style="">I</i><sub>ds</sub>~<i style="">V</i><sub>ds</sub> characteristics, transconductance, channel conductance, intrinsic device capacitances and their dependence on temperature has also been discussed.
Description: 697-704
URI: http://hdl.handle.net/123456789/8860
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.43(09) [September 2005]

Files in This Item:
File Description SizeFormat 
IJPAP 43(9) 697-704.pdf388.15 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.