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|Title:||Analytical model for high temperature performance of non-self aligned SiC MESFET|
|Authors:||Aggarwal, Sandeep Kr|
Gupta, R S
|Abstract:||An analytical model to evaluate the performance of a non-self-aligned SiC MESFET at elevated temperatures is developed. The formulation, devoid of complex mathematics takes into account all the major effects such as effective mobility, gate-bias dependent parasitic resistances and self-back gating effect. The model evaluates <i style="">I</i><sub>ds</sub>~<i style="">V</i><sub>ds</sub> characteristics, transconductance, channel conductance, intrinsic device capacitances and their dependence on temperature has also been discussed.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.43(09) [September 2005]|
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