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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.43 [2005] >
IJPAP Vol.43(09) [September 2005] >
| Title: | Analytical model for high temperature performance of non-self aligned SiC MESFET |
| Authors: | Aggarwal, Sandeep Kr
Gupta, Ritesh
Haldar, Subhasis
Gupta, Mridula
Gupta, R S |
| Keywords: | SiC-MESFET
Buried P-layer
Self-backgating effect
Parasitic resistances |
| Issue Date: | Sep-2005 |
| Publisher: | CSIR |
| IPC Code: | H01L29/768 |
| Abstract: | An analytical model
to evaluate the performance of a non-self-aligned SiC MESFET at elevated
temperatures is developed. The formulation, devoid of complex mathematics takes
into account all the major effects such as effective mobility, gate-bias
dependent parasitic resistances and self-back gating effect. The model
evaluates Ids~Vds characteristics,
transconductance, channel conductance, intrinsic device capacitances and their
dependence on temperature has also been discussed. |
| Page(s): | 697-704 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.43(09) [September 2005]
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