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Title: Analytical model for high temperature performance of non-self aligned SiC MESFET
Authors: Aggarwal, Sandeep Kr
Gupta, Ritesh
Haldar, Subhasis
Gupta, Mridula
Gupta, R S
Keywords: SiC-MESFET;Buried P-layer;Self-backgating effect;Parasitic resistances
Issue Date: Sep-2005
Publisher: CSIR
IPC Code: H01L29/768
Abstract: An analytical model to evaluate the performance of a non-self-aligned SiC MESFET at elevated temperatures is developed. The formulation, devoid of complex mathematics takes into account all the major effects such as effective mobility, gate-bias dependent parasitic resistances and self-back gating effect. The model evaluates Ids~Vds characteristics, transconductance, channel conductance, intrinsic device capacitances and their dependence on temperature has also been discussed.
Page(s): 697-704
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.43(09) [September 2005]

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