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IJPAP Vol.43(09) [September 2005] >

Title: Genetic approach towards the optimization of the system parameters of polar semiconductor quantum wells for better high frequency response
Authors: Sarkar, Subir Kumar
Keywords: Genetic algorithm
Polar semiconductor
Quantum well
High-frequency response
Scattering mechanisms
Issue Date: Sep-2005
Publisher: CSIR
IPC CodeH01L21/00
Abstract: The optimized system parameters of polar semiconductor quantum wells have been calculated to get desired high frequency response characterized by 3dB cut-off frequency at which the ac mobility drops to 0.707 of its low frequency value. The ac mobility of two-dimensional hot electrons in square quantum wells of GaAs and (In, Ga)As are computed numerically using heated drifted Fermi-Dirac distribution function and prevalent scattering mechanisms. Genetic algorithm has been employed to get the optimized system parameters for getting the desired high-frequency, small power consuming and low dimensional devices, thereby saving significantly the search time for the technologists involved in the fabrication of such devices.
Page(s): 691-696
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Source:IJPAP Vol.43(09) [September 2005]

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