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|Title:||Genetic approach towards the optimization of the system parameters of polar semiconductor quantum wells for better high frequency response|
|Authors:||Sarkar, Subir Kumar|
|Keywords:||Genetic algorithm;Optimization;Polar semiconductor;Quantum well;High-frequency response;Scattering mechanisms|
|Abstract:||The optimized system parameters of polar semiconductor quantum wells have been calculated to get desired high frequency response characterized by 3dB cut-off frequency at which the ac mobility drops to 0.707 of its low frequency value. The ac mobility of two-dimensional hot electrons in square quantum wells of GaAs and (In, Ga)As are computed numerically using heated drifted Fermi-Dirac distribution function and prevalent scattering mechanisms. Genetic algorithm has been employed to get the optimized system parameters for getting the desired high-frequency, small power consuming and low dimensional devices, thereby saving significantly the search time for the technologists involved in the fabrication of such devices.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.43(09) [September 2005]|
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