Please use this identifier to cite or link to this item:
Title: Magneto-resistance and I-V characteristic studies of AlSb and InSb thin film bilayer structure
Authors: Singh, M
Vijay, Y K
Keywords: I-V characteristic
Magneto resistance
Rutherford backscattering measurements
Issue Date: May-2005
Publisher: CSIR
Series/Report no.: G01R21/10
Abstract:  The I-V characteristic and magneto-resistance of Al-Sb and In-Sb thin films were measured with Cu electrode as the electrical contact. It was found that I-V characteristics are non-linear in nature and magneto-resistance decreases in case of Al-Sb and increases in case of In-Sb thin film bilayer structure. The Rutherford backscattering measurements also indicate the inter-diffusion and the concentration varies with temperature.
Description: 383-385
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.43(05) [May 2005]

Files in This Item:
File Description SizeFormat 
IJPAP 43(5) 383-385.pdf142.94 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.