NISCAIR Online Periodicals Repository

Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.43 [2005] >
IJPAP Vol.43(05) [May 2005] >

Title: Magneto-resistance and I-V characteristic studies of AlSb and InSb thin film bilayer structure
Authors: Singh, M
Vijay, Y K
Keywords: I-V characteristic
Magneto resistance
Rutherford backscattering measurements
Issue Date: May-2005
Publisher: CSIR
IPC CodeG01R21/10
Abstract:  The I-V characteristic and magneto-resistance of Al-Sb and In-Sb thin films were measured with Cu electrode as the electrical contact. It was found that I-V characteristics are non-linear in nature and magneto-resistance decreases in case of Al-Sb and increases in case of In-Sb thin film bilayer structure. The Rutherford backscattering measurements also indicate the inter-diffusion and the concentration varies with temperature.
Page(s): 383-385
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Source:IJPAP Vol.43(05) [May 2005]

Files in This Item:

File Description SizeFormat
IJPAP 43(5) 383-385.pdf142.94 kBAdobe PDFView/Open
 Current Page Visits: 120 
Recommend this item


Online Submission of Articles |  NISCAIR Website |  National Knowledge Resources Consortium |  Contact us |  Feedback

Disclaimer: NISCAIR assumes no responsibility for the statements and opinions advanced by contributors. The editorial staff in its work of examining papers received for publication is helped, in an honorary capacity, by many distinguished engineers and scientists.

CC License Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India

Copyright © 2015 The Council of Scientific and Industrial Research, New Delhi. All rights reserved.

Powered by DSpace Copyright © 2002-2007 MIT and Hewlett-Packard | Compliant to OAI-PMH V 2.0

Home Page Total Visits: 162273 since 01-Sep-2015  Last updated on 21-Jun-2016Webmaster: