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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.43 [2005] >
IJPAP Vol.43(03) [March 2005] >
| Title: | Stability of liquid metal Schottky contacts |
| Authors: | Modi, B P
Mathai, Achamma John
Patel, K D
Pathak, V M
Srivastava, R |
| Keywords: | Schottky barrier
Saturation current
Barrier height
Ideality factor |
| Issue Date: | Mar-2005 |
| Publisher: | CSIR |
| IPC Code: | B28D5/00 |
| Abstract: | All
evolutionary aspects of Schottky barriers e.g. the factors contributing to the
band alignment at metal-semiconductor interfaces, are still not well
understood. Liquid metal-semiconductor interfaces provide an opportunity to
probe them since their formation process eliminates or minimizes many
influencing factors e.g. formation of oxide layer, changes in surface
morphology due to impact of deposited metal atoms etc. when compared to the
formation of solid metal semiconductor interfaces. However, the liquid state of
metal possessing higher equilibrium thermodynamic energy, may induce
instability at interfaces by inducing interfacial reactions ultimately showing
up in ageing effect. The liquid metals namely Hg and Ga on p-type silicon show no such effect and hence can be fruitfully
exploited for probing evolutionary aspects of metal-semiconductor interfaces
through liquid metal route. |
| Page(s): | 184-187 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.43(03) [March 2005]
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