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Title: Stability of liquid metal Schottky contacts
Authors: Modi, B P
Mathai, Achamma John
Patel, K D
Pathak, V M
Srivastava, R
Keywords: Schottky barrier
Saturation current
Barrier height
Ideality factor
Issue Date: Mar-2005
Publisher: CSIR
Series/Report no.: B28D5/00
Abstract: All evolutionary aspects of Schottky barriers e.g. the factors contributing to the band alignment at metal-semiconductor interfaces, are still not well understood. Liquid metal-semiconductor interfaces provide an opportunity to probe them since their formation process eliminates or minimizes many influencing factors e.g. formation of oxide layer, changes in surface morphology due to impact of deposited metal atoms etc. when compared to the formation of solid metal semiconductor interfaces. However, the liquid state of metal possessing higher equilibrium thermodynamic energy, may induce instability at interfaces by inducing interfacial reactions ultimately showing up in ageing effect. The liquid metals namely Hg and Ga on p-type silicon show no such effect and hence can be fruitfully exploited for probing evolutionary aspects of metal-semiconductor interfaces through liquid metal route.
Description: 184-187
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.43(03) [March 2005]

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