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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.43 [2005] >
IJPAP Vol.43(02) [February 2005] >
| Title: | Hall coefficient and coefficient of transverse magneto-resistance of intermediately doped n-type silicon with mixed scattering |
| Authors: | Getinet, Tesfaye |
| Keywords: | Hall coefficient
n-Type silicon
Magneto-resistance
Acoustic phonons |
| Issue Date: | Feb-2005 |
| Publisher: | CSIR |
| IPC Code: | H03B 15/00 |
| Abstract: | The explicit
expressions for Hall coefficient and coefficient of transverse
magneto-resistance in an intermediately doped n-type silicon with mixed scattering of electrons by both ionized
impurities as well as acoustic phonons by using the modified density of states
function have been derived. These explicit expressions are used to numerically
calculate the dimensionless Hall coefficient and coefficient of transverse
magneto resistance for different doping concentrations at room temperature. By
using the modified density of states function changes the coefficients by as
much as 62% and 11% for the normalized Hall coefficient and coefficient of
transverse magneto resistance, respectively at room temperature when compared
with the corresponding calculations obtained by using the parabolic density of
states function. |
| Page(s): | 104-108 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.43(02) [February 2005]
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