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|Title:||Hall coefficient and coefficient of transverse magneto-resistance of intermediately doped n-type silicon with mixed scattering|
<i style="">n-</i>Type silicon
|Series/Report no.:||H03B 15/00|
|Abstract:||The explicit expressions for Hall coefficient and coefficient of transverse magneto-resistance in an intermediately doped <i style="">n-</i>type silicon with mixed scattering of electrons by both ionized impurities as well as acoustic phonons by using the modified density of states function have been derived. These explicit expressions are used to numerically calculate the dimensionless Hall coefficient and coefficient of transverse magneto resistance for different doping concentrations at room temperature. By using the modified density of states function changes the coefficients by as much as 62% and 11% for the normalized Hall coefficient and coefficient of transverse magneto resistance, respectively at room temperature when compared with the corresponding calculations obtained by using the parabolic density of states function.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.43(02) [February 2005]|
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