Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/8714
Title: Hall coefficient and coefficient of transverse magneto-resistance of intermediately doped n-type silicon with mixed scattering
Authors: Getinet, Tesfaye
Keywords: Hall coefficient
<i style="">n-</i>Type silicon
Magneto-resistance
Acoustic phonons
Issue Date: Feb-2005
Publisher: CSIR
Series/Report no.: H03B 15/00
Abstract: The explicit expressions for Hall coefficient and coefficient of transverse magneto-resistance in an intermediately doped <i style="">n-</i>type silicon with mixed scattering of electrons by both ionized impurities as well as acoustic phonons by using the modified density of states function have been derived. These explicit expressions are used to numerically calculate the dimensionless Hall coefficient and coefficient of transverse magneto resistance for different doping concentrations at room temperature. By using the modified density of states function changes the coefficients by as much as 62% and 11% for the normalized Hall coefficient and coefficient of transverse magneto resistance, respectively at room temperature when compared with the corresponding calculations obtained by using the parabolic density of states function.
Description: 104-108
URI: http://hdl.handle.net/123456789/8714
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.43(02) [February 2005]

Files in This Item:
File Description SizeFormat 
IJPAP 43(2) 104-108.pdf194.31 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.