Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/8452
Title: Persistent photoconductivity in a-Se90Ge10-xInx thin films
Authors: Singh, Sangeeta
Shukla, R K
Kumar, A
Issue Date: Oct-2005
Publisher: CSIR
Series/Report no.: H01L27/00
Abstract: Transient photoconductivity has been studied in amorphous Se90Ge10-xInx thin films prepared by vacuum evaporation. It is observed that the decay of photoconductivity is quite slow in these samples. A persistent photoconductivity, with an extremely slow decay rate is also observed during decay process. The magnitude of persistent photoconductivity increases with increase in illumination time, intensity of light and temperature of the films. The results indicate that some kind of photo induced structural changes occur in these samples, which are of reversible nature and have time constants of a few hours. Studies made on various compositions under identical conditions show that the persistent photoconductivity is minimum at 4 at. % of Indium. This discontinuity at an average coordination number < Z >= 2.2 is closer to the value suggested by topological models based on constraints theory.
Description: 461-466
URI: http://hdl.handle.net/123456789/8452
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Appears in Collections:IJEMS Vol.12(5) [October 2005]

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