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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.44 [2006] >
IJPAP Vol.44(12) [December 2006] >
| Title: | Temperature, current and doping dependence of non-ideality factor for pnp and npn punch-through structures |
| Authors: | Shah, Khurshed Ahmad
Islam, S S |
| Keywords: | Punch-through diode
Numerical method
Parametric study
Non-ideality factor |
| Issue Date: | Dec-2006 |
| Publisher: | CSIR |
| IPC Code: | H01L29/861 |
| Abstract: | The effect of punch-through in devices is of great importance in
electronic industry. In this paper, an efficient, unconditionally stable,
simple and accurate method has been presented for solving non-linear transport
equations for carriers with appropriate choice of initial values of dependent
variables. The methods are so fast that parameter dependence of non-ideality
for punch-through structures has been incorporated easily and their specific
effects have been determined precisely. The present study reveals that the
non-ideality factor decreases with temperature and increases with current and
doping concentration of the active region of the device. The relative changes
are larger at lower temperatures and more effective at higher impurity density
of the active region of the device. This study enables to have better understanding
of the punch-through mechanism and design of these devices. |
| Page(s): | 953-958 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.44(12) [December 2006]
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