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|Title:||Temperature, current and doping dependence of non-ideality factor for <i style="">pnp </i>and <i style="">npn</i> punch-through structures|
|Authors:||Shah, Khurshed Ahmad|
Islam, S S
|Abstract:||The effect of punch-through in devices is of great importance in electronic industry. In this paper, an efficient, unconditionally stable, simple and accurate method has been presented for solving non-linear transport equations for carriers with appropriate choice of initial values of dependent variables. The methods are so fast that parameter dependence of non-ideality for punch-through structures has been incorporated easily and their specific effects have been determined precisely. The present study reveals that the non-ideality factor decreases with temperature and increases with current and doping concentration of the active region of the device. The relative changes are larger at lower temperatures and more effective at higher impurity density of the active region of the device. This study enables to have better understanding of the punch-through mechanism and design of these devices.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.44(12) [December 2006]|
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