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dc.contributor.authorWary, G-
dc.contributor.authorKachary, T-
dc.contributor.authorRahman, A-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.description.abstractThe thin film (n)ZnO/(p)CdTe heterojuctions with different doping concentrations were prepared by vacuum evaporation and their electrical and optical properties, both in dark and under illumination at room temperature as well as at elevated temperatures were studied. The structures showed change of photovoltaic (PV) effect, giving fill factor 0.59 for H-treated sample with open-circuit voltage 368 mV and short-circuit current density 76.3810-4 mA/cm2 and for untreated sample 0.46 with open-circuit voltage 250mV and short-circuit current density 57.11x104 mA/cm2 for doping concentration Na=1.301017/cm3 (4.90% Sb doped CdTe) and Nd=3.331017/cm3(4.25% Al doped ZnO). The variations of PV efficiency at room temperature with respect to these doping concentrations were shown to be the optimal value of this typical (n)ZnO/(p)CdTe junction. The fill factor has been found to increase with temperatures showing a maximum value around 343K for H-treated and 335K for untreated samples. The proper doping, annealing and hydrogenation are necessary to reduce the series resistance so as to achieve an ideal and high efficiency PV converter.en_US
dc.sourceIJPAP Vol.44(10) [October 2006]en_US
dc.subjectDangling bonden_US
dc.subjectPhotovoltaic effecten_US
dc.titleThermal and doping effect on photovoltaic behaviour of H-treated (n)ZnO/(p)CdTe heterojunctionsen_US
Appears in Collections:IJPAP Vol.44(10) [October 2006]

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