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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.44 [2006] >
IJPAP Vol.44(10) [October 2006] >
| Title: | Thermal and doping effect on photovoltaic behaviour of H-treated (n)ZnO/(p)CdTe heterojunctions |
| Authors: | Wary, G
Kachary, T
Rahman, A |
| Keywords: | Heterojunction
Doping
Hydrogenation
Dangling bond
Photovoltaic effect |
| Issue Date: | Oct-2006 |
| Publisher: | CSIR |
| IPC Code: | H01L31/00 |
| Abstract: | The thin film (n)ZnO/(p)CdTe
heterojuctions with different doping concentrations were prepared by vacuum
evaporation and their electrical and optical properties, both in dark and under
illumination at room temperature as well as at elevated temperatures were
studied. The structures showed change of photovoltaic (PV) effect, giving fill
factor 0.59 for H-treated sample with open-circuit voltage 368 mV and
short-circuit current density 76.38 10-4
mA/cm2 and for untreated sample 0.46 with open-circuit voltage 250mV
and short-circuit current density 57.11x104 mA/cm2 for
doping concentration Na=1.301017/cm3
(4.90% Sb doped CdTe) and Nd=3.331017/cm3(4.25% Al
doped ZnO). The variations of PV efficiency at room temperature with respect to
these doping concentrations were shown to be the optimal value of this typical
(n)ZnO/(p)CdTe junction. The fill factor has been found to
increase with temperatures showing a maximum value around 343K for H-treated
and 335K for untreated samples. The proper doping, annealing and hydrogenation
are necessary to reduce the series resistance so as to achieve an ideal and
high efficiency PV converter. |
| Page(s): | 754-758 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.44(10) [October 2006]
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