Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/8357
Title: Study of ion and electron beam irradiation effects in Al-Sb bilayer thin films
Authors: Mangal, R K
Singh, M
Vijay, Y K
Avasthi, D K
Keywords: Thin films
Al-Sb, Ion irradiation
Electron irradiation
Absorption
RBS
Optical band gap
Issue Date: Sep-2006
Publisher: CSIR
Series/Report no.: H01L29/76
Abstract:  Thin films having uniform thicknesses of aluminium over different thicknesses of antimony were prepared by thermal evaporation (resistive heating) method at the pressure 10-5 torr. The samples were irradiated by Ag12+ heavy ions of energy 160 Mev at the fluence 2.21013 ions/cm2. The similar set of these films have also been irradiated by electron beam having energy 10 keV for two hours. The optical absorption spectra and Rutherford back scattering analysis have been carried out for these films. X-ray diffraction spectra of virgin as well as ion irradiated sample, show orthorhombic structure of the films. These results show that the inter diffusion of bilayer with irradiation effects. It is also suggested that ion beam irradiation gives the better results in comparison to electron beam. These results confirm the mixing of Al/Sb bilayer by irradiation process.
Description: 685-689
URI: http://hdl.handle.net/123456789/8357
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.44(09) [September 2006]

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