Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/8335
Title: Effective heating in heavily doped semiconductor devices
Authors: De, S S
Ghosh, A K
Ghosh, T K
Jana, D
Keywords: Thermal properties
Semiconductor devices
Energy conversion
Issue Date: Jul-2006
Publisher: CSIR
Series/Report no.: H01L21/00
Abstract: A model has been developed to investigate the heat generation processes in semiconductor devices under heavily doped condition. The equilibrium between heat generation and heat dissipation by various mechanisms has been studied. The variations of heat dissipation with the change of carrier concentrations and the heat along the distance from the junction to the bulk have been estimated by numerical analyses. These are shown graphically with the results of an earlier work.
Description: 543-547
URI: http://hdl.handle.net/123456789/8335
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.44(07) [July 2006]

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