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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.44 [2006] >
IJPAP Vol.44(03) [March 2006] >
| Title: | Studies on size dependent properties of cadmium telluride thin films deposited by using successive ionic layer adsorption and reaction method |
| Authors: | Ubale, A U
Kulkarni, D K |
| Keywords: | Thin film growth
SILAR
Bandgap energy |
| Issue Date: | Mar-2006 |
| Publisher: | CSIR |
| IPC Code: | H01F 41/30 |
| Abstract: | Successive ionic
layer adsorption and reaction method (SILAR) have been used to deposit CdTe
thin films onto glass substrate using cadmium chloride solution as cationic and
sodium tellurite solution as anionic precursor. In order to study size
dependent optical, structural and electrical properties, films having different
thicknesses from 96 to 312 nm have been prepared by changing SILAR deposition
cycles from 50 to 110. The XRD studies show that films were nanocrystalline in
nature with Wurtzite (hexagonal) structure. A shift of band gap energy from 1.86 to 1.47 eV, a decrease in electrical resistivity from 10.52 × 101
to 4.78 × 101 Wm (at 528 K), increase in grain size from 14.5 to 32.8 nm and
decrease in activation energy from 0.39 to 0.19 eV have been observed when film
thickness was varied from 96 to 312 nm.
The films prepared are semiconducting in nature with p-type conductivity. |
| Page(s): | 254-259 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.44(03) [March 2006]
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