Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/8252
Title: Effect of temperature on non-linear optical properties of InGaAs/GaAs single quantum dot
Authors: Bafna, M K
Sen, P
Sen, P K
Keywords: Semiconductor quantum dot
Temperature dependent non-linear absorption
Exciton
Biexciton
Third-order susceptibility
Issue Date: Feb-2006
Publisher: CSIR
Series/Report no.: B82B 3/00
Abstract: Based upon the semi-classical density matrix approach, a detailed theoretical investigation has been made to analyze the effect of temperature on non-linear optical properties of InGaAs/GaAs single quantum dot (QD). The temperature effects have been incorporated via temperature dependent (i) dephasing mechanism, (ii) band gap energy and (iii) population density. The semiconductor QD has been chosen to be small enough such that the confinement effect dominates over the Coulombic contribution. Detailed numerical estimates of the non-linear refraction and absorption properties have been made. Redshifts of the non-linear refraction and absorption peaks as well as reduction in the induced polarization are found to occur with increasing temperature. The present analysis further reveals that the non-linear gain reduces at higher temperature.
Description: 152-156
URI: http://hdl.handle.net/123456789/8252
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.44(02) [February 2006]

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