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|Title:||Room temperature magnetism in Ge based bulk dilute magnetic semiconductors|
|Authors:||Somayajulu, D R S|
Sebastian, K C
|Abstract:||Mössbauer spectroscopy was used to study the hyperfine interactions in the Bulk Fe<sub>0.008</sub>Ge<sub>0.992</sub> system. The room temperature magnetism observed in the V and VI group donor impurity (As, Sb, Bi and Te) doped FeGe system is reviewed. Magneto-resistance and Hall effect measurements on these systems are discussed. The formation of Donor-Acceptor Pairs (DAP’s) and carrier mediation seems to be the cause for this room temperature magnetic interactions in the Ge based bulk dilute magnetic semiconductors.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.44(02) [February 2006]|
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