Please use this identifier to cite or link to this item:
Title: Electronic properties of CdS, CdSe and CdTe semiconductor binary alloys
Authors: Jivani, A R
Trivedi, H J
Gajjar, P N
Jani, A R
Keywords: Higher-order perturbation theory
Band gap
Binary semiconductor compound
Issue Date: Jan-2006
Publisher: CSIR
Series/Report no.: C30B
Abstract: The higher-order perturbation theory based on pseudopotential is used to calculate total energy, band gap at Jones-zone face and bulk modulus of CdS, CdSe and CdTe binary semiconductor compounds. The covalent correction term, which is approximately equal to third and fourth-order perturbation energy, is used in the present study. The ratio of covalent bond correction energy to second-order perturbation energy is about 15% and hence it is essential to study the electronic properties of semiconductor materials. Present theoretical results are found better than other available theoretical findings and good agreements of present finding of total energy, band gap at Jones-zone face and bulk modulus with the experimental data are achieved.
Description: 59-61
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.44(01) [January 2006]

Files in This Item:
File Description SizeFormat 
IJPAP 44(1) 59-61.pdf92.19 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.