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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.44 [2006] >
IJPAP Vol.44(01) [January 2006] >
| Title: | Electronic properties of CdS, CdSe and CdTe semiconductor binary alloys |
| Authors: | Jivani, A R
Trivedi, H J
Gajjar, P N
Jani, A R |
| Keywords: | Higher-order perturbation theory
Pseudopotential
Band gap
Binary semiconductor compound |
| Issue Date: | Jan-2006 |
| Publisher: | CSIR |
| IPC Code: | C30B |
| Abstract: | The higher-order perturbation theory based
on pseudopotential is used to calculate total energy, band gap at Jones-zone
face and bulk modulus of CdS, CdSe and CdTe binary semiconductor compounds. The
covalent correction term, which is approximately equal to third and
fourth-order perturbation energy, is used in the present study. The ratio of
covalent bond correction energy to second-order perturbation energy is about
15% and hence it is essential to study the electronic properties of
semiconductor materials. Present theoretical results are found better than
other available theoretical findings and good agreements of present finding of
total energy, band gap at Jones-zone face and bulk modulus with the
experimental data are achieved. |
| Page(s): | 59-61 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.44(01) [January 2006]
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