NISCAIR Online Periodicals Repository

Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.44 [2006] >
IJPAP Vol.44(01) [January 2006] >

Title: Structural, optical, electrical and photovoltaic electrochemical studies of cobalt molybdate thin films
Authors: Pandey, P K
Bhave, N S
Kharat, R B
Keywords: Cobalt molybdate thin films
Spray pyrolysis
Optical absorption
dc electrical conductivity
Issue Date: Jan-2006
Publisher: CSIR
IPC CodeH01C17/1075, G01R
Abstract: The deposition of cobalt molybdate (CoMoO4) thin film by spray pyrolysis (SP) process, using its ammoniacal solution as precursor, has been presented. The growth of the film takes place by pyrolytic decomposition of the spraying precursor solution onto the preheated glass substrates. X-ray diffraction (XRD) studies confirm the microcrystalline, single-phase nature of the sintered thin films. Scanning electron microscope (SEM) images clearly show the aggregate of crystallites of dimensions 1-5 mm. The optical absorption studies of the sintered thin films in the wavelength range 350 - 850 nm show direct as well as indirect optical transitions in the material. The direct and indirect band gap values found to be 1.75 and 1.40 Ev, respectively. The films are semiconducting in nature and highly resistive at room temperature as evident from their dc electrical conductivity measurements obtained by the two point probe method in the temperature range 300 - 500 K. Plot of log(σ) versus 1/T clearly indicates a break in the curve corresponding to the temperature 345 K. The thin films of CoMoO4 deposited on FTO coated conducting glass substrate were sintered in hydrogen atmosphere to be used as photoanode in photovoltaic electrochemical (PVEC) cell. The PVEC cell configuration is: CoMoO4 | Ce4+, Ce3+ | Pt; 0.1 M in 0.1 N H2SO4. The PVEC characterization reveals the fill factor and power conversion efficiency to be 0.431 and 1.20%, respectively. The flat band potential has been found to be – 0.32 V versus Standard calomel electrode (SCE).
Page(s): 52-58
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Source:IJPAP Vol.44(01) [January 2006]

Files in This Item:

File Description SizeFormat
IJPAP 44(1) 52-58.pdf669.7 kBAdobe PDFView/Open
 Current Page Visits: 149 
Recommend this item


Online Submission of Articles |  NISCAIR Website |  National Knowledge Resources Consortium |  Contact us |  Feedback

Disclaimer: NISCAIR assumes no responsibility for the statements and opinions advanced by contributors. The editorial staff in its work of examining papers received for publication is helped, in an honorary capacity, by many distinguished engineers and scientists.

CC License Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India

Copyright © 2015 The Council of Scientific and Industrial Research, New Delhi. All rights reserved.

Powered by DSpace Copyright © 2002-2007 MIT and Hewlett-Packard | Compliant to OAI-PMH V 2.0

Home Page Total Visits: 169532 since 01-Sep-2015  Last updated on 30-Jun-2016Webmaster: