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Indian Journal of Engineering and Materials Sciences (IJEMS) >
IJEMS Vol.13 [2006] >
IJEMS Vol.13(3) [June 2006] >
| Title: | Growth kinetic model for liquid phase electro epitaxial growth of GaSb |
| Authors: | Mouleeswaran, D
Dhanasekaran, R |
| Issue Date: | Jun-2006 |
| Publisher: | CSIR |
| IPC Code: | C09K 19/00 |
| Abstract: | A
two-dimensional growth kinetic model has been proposed to calculate the growth
velocity and thickness of GaSb epitaxial layers grown by liquid phase electro
epitaxy (LPEE) with a polycrystalline GaSb source material, which can be used
to supply the solute species to the depleted growth solution during growth. The
solute species (Sb) are continuously supplied from the source material to the
growth solution by diffusion and electromigration. In the proposed theoretical
model, numerical simulation has been followed to calculate the growth rate and
thickness of the GaSb epitaxial layer from a Ga-rich solution. The theoretical
findings indicate that the growth rate depends on the growth parameters such as
growth temperature, growth time, diffusion of solute species, mobility of
solute species, thickness of the substrate and source, thermoelectric effects
and applied current density in the solution. The proposed model is based on the
assumption that there is no nucleation in the solution. The growth rate,
thickness of GaSb epitaxial layer and amount of dissolution of source material
for different experimental growth conditions have been determined. |
| Page(s): | 231-237 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Source: | IJEMS Vol.13(3) [June 2006]
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