Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/7421
Title: High field <i>dc</i> electrical conductivity in silicon
Authors: Getinet, Tesfaye
Keywords: Electric conductivity
Silicon
Semiconductor devices
Hall coefficient
Issue Date: Mar-2010
Publisher: CSIR
Abstract: An analytical expression for the conductivity of electrons in silicon in the presence of high <i>dc</i> electric field has been derived in the present paper by considering the asymmetric distribution function of electrons which is a function of electric field. This has resulted in dependence of the net number of electrons and their conductivity on electric field. The conductivity of electrons decreases drastically as electric field increases because of high <i>dc </i>electric field. The drift velocity of electrons experiences a transient effect and the time taken by electrons moving between successive collisions decreases as a result of quantum emission. The result of the present paper might be very important in characterising semiconductor devices where high field is primarily of concern.
Description: 192-195
URI: http://hdl.handle.net/123456789/7421
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.48(03) [March 2010]

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