Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/7240
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dc.contributor.authorPradyumnan, P P-
dc.contributor.authorSwathikrishnan-
dc.date.accessioned2010-01-21T05:58:13Z-
dc.date.available2010-01-21T05:58:13Z-
dc.date.issued2010-02-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/7240-
dc.description115-120en_US
dc.description.abstractThe Bi2Te3, Sb2Te3 and Bi2Te3-Sb2Te3 bilayer thin films of various thickness have been prepared using thermal evaporation at vacuum. X-ray diffraction method is used for the characterisation of the samples. Electrical studies have been carried out using the standard four probe method and then the activation energies of each film before and after annealing are obtained. Thermoelectric behaviour of each sample is also determined at various temperature regions.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJPAP Vol.48(02) [February 2010]en_US
dc.subjectThin filmsen_US
dc.subjectThermoelectric propertiesen_US
dc.subjectBilayer thin filmsen_US
dc.titleThermoelectric properties of Bi2Te3 and Sb2Te3 and its bilayer thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.48(02) [February 2010]

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