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|Title:||Photoelectrochemical characterization of Bi<sub>2</sub>S<sub>3</sub> thin films deposited by modified chemical bath deposition|
|Authors:||Ahire, R R|
Sharma, R P
|Abstract:||For the photoelectrochemical (PEC) solar cell, the prime requirement is that photoelectrode/ photoanode should have bandgap close to the maximum in the visible spectrum. Bismuth sulphide (Bi<sub>2</sub>S<sub>3</sub>) is challenging material because of its mid-way bandgap (<i style="">E<sub>g</sub></i> = 1.74 eV) and absorption coefficient of the order of 10<sup>4 </sup>cm<sup>-1</sup>. In the present investigation, bismuth sulphide (Bi<sub>2</sub>S<sub>3</sub>) thin films of thickness about 0.14 mm have been prepared by using modified chemical bath deposition method onto glass and fluorine doped tin oxide (FTO) coated glass substrate under optimized conditions. The films are annealed at 200ºC for 2 h in air. It is found that deposited films turn from amorphous to polycrystalline after annealing. The Bi<sub>2</sub>S<sub>3</sub>/NaOH-S-Na<sub>2</sub>S/C cell has been fabricated by using Bi<sub>2</sub>S<sub>3</sub> annealed films and their photoelectrochemical performance has been studied. It is found that Bi<sub>2</sub>S<sub>3</sub> films are photoactive. However, conversion efficiency is low (0.056%) due to low series and high shunts resistance of Bi<sub>2</sub>S<sub>3</sub> films.|
|ISSN:||0975-1017 (Online); 0971-4588 (Print)|
|Appears in Collections:||IJEMS Vol.13(2) [April 2006]|
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