Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/6609
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dc.contributor.authorSarma, R-
dc.contributor.authorSaikia, D-
dc.date.accessioned2009-11-16T12:12:54Z-
dc.date.available2009-11-16T12:12:54Z-
dc.date.issued2009-12-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/6609-
dc.description876-879en_US
dc.description.abstractTetracene organic field-effect transistors (OFET) have been fabricated and investigated with La2O3 as gate insulator. The fabricated organic thin film transistors exhibit p-type conductivity with field effect mobility 1.04×10-4 cm2/V.s, ON-OFF ratio 3.465, sub-threshold swing 17.8 mV/decade and hole concentration 1.25×1019 cm-3. The SEM and XRD analysis on the semiconductor film were have also been reported.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJPAP Vol.47(12) [December 2009]en_US
dc.subjectOrganic thin film transistorsen_US
dc.subjectTetraceneen_US
dc.subjectGate insulatoren_US
dc.subjectHole concentrationen_US
dc.subjectInterface trapsen_US
dc.titleStudy of tetracene thin film transistors using La2O3 as gate insulatoren_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.47(12) [December 2009]

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