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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.47 [2009] >
IJPAP Vol.47(12) [December 2009] >
| Title: | Study of tetracene thin film transistors using La2O3 as gate insulator |
| Authors: | Sarma, R
Saikia, D |
| Keywords: | Organic thin film transistors
Tetracene
Gate insulator
Hole concentration
Interface traps |
| Issue Date: | Dec-2009 |
| Publisher: | CSIR |
| Abstract: | Tetracene organic
field-effect transistors (OFET) have been fabricated and investigated with La2O3
as gate insulator. The fabricated organic thin film transistors exhibit p-type
conductivity with field effect mobility 1.04×10-4 cm2/V.s,
ON-OFF ratio 3.465, sub-threshold swing 17.8 mV/decade and hole concentration
1.25×1019 cm-3. The SEM and XRD analysis on the
semiconductor film were have also been reported. |
| Page(s): | 876-879 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.47(12) [December 2009]
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