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|Title:||Study of tetracene thin film transistors using La2O3 as gate insulator|
|Keywords:||Organic thin film transistors;Tetracene;Gate insulator;Hole concentration;Interface traps|
|Abstract:||Tetracene organic field-effect transistors (OFET) have been fabricated and investigated with La2O3 as gate insulator. The fabricated organic thin film transistors exhibit p-type conductivity with field effect mobility 1.04×10-4 cm2/V.s, ON-OFF ratio 3.465, sub-threshold swing 17.8 mV/decade and hole concentration 1.25×1019 cm-3. The SEM and XRD analysis on the semiconductor film were have also been reported.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.47(12) [December 2009]|
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