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NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR) >
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Research Journals >
Indian Journal of Engineering and Materials Sciences (IJEMS) >
IJEMS Vol.16 [2009] >
IJEMS Vol.16(5) [October 2009] >
| Title: | Innovative low pressure borophosphosilicate glass processes for nano devices |
| Authors: | Jagadeesha, T
Kim, Louis
Gonsalvis, Joseph
Gowda, Thammaiah |
| Keywords: | BPSG
PSG
Low pressure BPSG |
| Issue Date: | Oct-2009 |
| Publisher: | CSIR |
| Abstract: | Doping of oxide with phosphorous can trap
mobile ions and reduce the re-flow temperature. By adding boron the reflow
temperature can be reduced further without excessive phosphorous, which may
cause metal corrosion. Borophosphosilicate glass (BPSG) and phosphosilicate
glass (PSG) processes are mainly used for premetal dielectric (PMD)
applications. In the present study, a new low pressure BPSG process has been
developed which can be used for Flash memory and Logic devices. It is shown
that films with phosphorus and boron concentrations in the range of
1.85-9.15 elemental wt% are deposited with film thickness 6000 Å BPSG and 100
Torr process has been found to achieve more stable film thickness. Decreasing
the deposition pressure from 200 to 100 Torr results in a 50% increase in the
deposition rate of twin-wafer SACVD BPSG and has zero effect on film
properties. Throughput has been improvement by 20% on SACVD PMD BPSG
application. |
| Page(s): | 341-346 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Source: | IJEMS Vol.16(5) [October 2009]
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